Gan On Sapphire Led

For more information of gan substrate please see.

Gan on sapphire led.

Upon requests we can provide blue and green semi polar led epi wafers as a demonstration to customers. At 16 v the device on sapphire starts to suffer from thermal effects but still demonstrated 5 5 w mm with an associated 20 6 power added efficiency. We demonstrated cw operation with powers of several mws for 340 350 nm inalgan qw uv leds on both gan single crystal substrates and sapphire substrates. For example gan is the substrate which makes violet 405 nm.

In this chapter the fundamental technical and economic aspects of the gan on sapphire substrates with a focus on the applications of visible leds are described. We supply high quality 2 inch and 4 inch 20 21 gan on sapphire templates for various led and laser applications. We offer gan free standing led grade and ld grade both. We demonstrate the monolithic integration of light emitting diodes leds photodetectors pds and waveguides on a gan on sapphire wafer.

The ingan gan multi quantum wells mqws play a key role in light emission from the led and photodetection from the pd. As described so far gan on a sapphire platform has been dominant for led components and modules and this will continue thanks to their optimized characteristics technological maturity compared to gan on a silicon platform and advantages in volume and cost compared to gan on alternative substrates including native gan substrates. In this work we show that n polar gan deep recess hemts grown on sapphire match the power performance of a device on sic up to 14 v with 5 1 w mm of output power density. Gan led epi on sapphire.

The development of 260 280 nm algan duv leds performed in 2005 2010 was an important step in the progress toward sterilization applications. 5 5mm 10 10mm or custom size gan on sapphire 0001 n type si doped or undoped 3 5um are available. Blue green 20 21 led epi wafer for demo. Therefore the platform of gan on sapphire is the most important technology currently in use for the applications of the leds and led based solid state lighting ssl.

Gallium nitride ga n is a binary iii v direct bandgap semiconductor commonly used in light emitting diodes since the 1990s. Gan gallium nitride templatespam xiamen s template products consist of crystalline layers of gallium nitride gan aluminum nitride aln aluminum gallium nitride algan and indium gallium nitride ingan which are deposited on sapphire substrates. Properties of gan substrate. Q1 what is the typical rms roughness of the polished sapphire backside surface.

Despite large stokes shift between absorption and emission energies in the ingan layer the mqws are capable of absorbing.